Assessment of patient dose in medical processes by

In-vivo dosimetry (IVD) in medicine especially in radiation therapy is a well-established and recommended procedure for the estimation of the dose delivered to a patient during the radiation treatment. It became even more important with the emerging use of new and more complex radiotherapy techniques such as intensity-modulated or image-guided radiation therapy. While IVD has been used in brachytherapy for decades and the initial motivation for performing was mainly to assess doses to organs at risk by direct measurements, it is now possible to calculate 3D for detection of deviations or errors. In-vivo dosimeters can be divided into real-time and passive detectors that need some finite time following irradiation for their analysis. They require a calibration against a calibrated ionization chamber in a known radiation field. Most of these detectors have a response that is energy and/or dose rate dependent and consequently require adjustments of the response to account for changes in the actual radiation conditions compared to the calibration situation. Correction factors are therefore necessary to take. Today, the most common dosimeters for patients’ dose verification through in-vivo measurements are semiconductor diodes, thermo-luminescent dosimeters, optically stimulated luminescence dosimeters, metal-oxide-semiconductor field-effect transistors and plastic scintillator detectors with small outer diameters

Investigation of temperature dependence of semiconductor detectors used in medicine for radiation measurements

In this study, the temperature dependence of p-type semiconductor diodes that are a part of in-vivo dosimetry system was assessed in Co-60 photon energy. The collimator and gantry angle on zero degree, SSD 100 cm, field size 20x20 cm2 was selected. The IBA EDP-5, EDP-10 and EDP-20 diode types that included in this study have different thickness of build-up material so the depth of measurements at water equivalent phantom by FC65-p ion chamber was selected at 5, 10 and 20 mm. Along the process the room and phantom temperature was measured and recorded (19°C). The special water filled PMMA phantom was used for diode set-up on its surface and a thermometer for determine phantom temperature was employed. Each type of diodes irradiated separately for one minute and the signal to dose sensitivity and calibration was performed at room temperature (19°C) by OmniPro-InViDos software with DPD-12 electrometer. Examination was repeated from 33°C to 20°C temperatures. The temperature correction factors were found from slope of the linear drawings for each diode types. The obtained correction factor for EDP-5 and EDP-10 was 0.29 %°C/cGy and 0.30 %°C/cGy respectively, that higher than recommended factor (%0.25°C/cGy). While the more fluctuation for EDP-20 was realized

Investigation of temperature dependence of semiconductor detectors used in medicine for radiation measurements

In this study, the temperature dependence of p-type semiconductor diodes that are a part of in-vivo dosimetry system was assessed in Co-60 photon energy. The collimator and gantry angle on zero degree, SSD 100 cm, field size 20x20 cm2 was selected. The IBA EDP-5, EDP-10 and EDP-20 diode types that included in this study have different thickness of build-up material so the depth of measurements at water equivalent phantom by FC65-p ion chamber was selected at 5, 10 and 20 mm. Along the process the room and phantom temperature was measured and recorded (19°C). The special water filled PMMA phantom was used for diode set-up on its surface and a thermometer for determine phantom temperature was employed. Each type of diodes irradiated separately for one minute and the signal to dose sensitivity and calibration was performed at room temperature (19°C) by OmniPro-InViDos software with DPD-12 electrometer. Examination was repeated from 33°C to 20°C temperatures. The temperature correction factors were found from slope of the linear drawings for each diode types. The obtained correction factor for EDP-5 and EDP-10 was 0.29 %°C/cGy and 0.30 %°C/cGy respectively, that higher than recommended factor (%0.25°C/cGy). While the more fluctuation for EDP-20 was realized